In this paper, the base/collector current characteristics of InGaP/GaAs heterojunction bipolar transistors (HBTs) for Volterra analysis are extracted using the low-frequency harmonic-power measurements with the associated phase-polarity information. The determining equations are derived via a system
Volterra series based nonlinear simulation of HBTs using analytically extracted models
β Scribed by Pehlke, D.R.; Pavlidis, D.; Samelis, A.
- Book ID
- 120021302
- Publisher
- The Institution of Electrical Engineers
- Year
- 1994
- Tongue
- English
- Weight
- 276 KB
- Volume
- 30
- Category
- Article
- ISSN
- 0013-5194
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