Resistive switching properties of solβge
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Chih-Yang Lin; Chun-Chieh Lin; Chun-Hsing Huang; Chen-Hsi Lin; Tseung-Yuen Tseng
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Article
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2007
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Elsevier Science
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English
β 737 KB
Hysteretic I-V characteristics of the SrZrO 3 (SZO) thin films with various Mo-doping concentrations were investigated in the study. The 0.2 mol% Mo-doping SZO-based memory device showed excellent resistive switching characteristics, and the resistive switching can be operated over 300 times during