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Voltage-Polarity-Independent and High-Speed Resistive Switching Properties of V-Doped SrZrO3 Thin Films

✍ Scribed by Chun-Chieh Lin; Chih-Yang Lin; Meng-Han Lin; Chen-Hsi Lin; Tseung-Yuen Tseng


Book ID
114618994
Publisher
IEEE
Year
2007
Tongue
English
Weight
251 KB
Volume
54
Category
Article
ISSN
0018-9383

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Resistive switching properties of sol–ge
✍ Chih-Yang Lin; Chun-Chieh Lin; Chun-Hsing Huang; Chen-Hsi Lin; Tseung-Yuen Tseng πŸ“‚ Article πŸ“… 2007 πŸ› Elsevier Science 🌐 English βš– 737 KB

Hysteretic I-V characteristics of the SrZrO 3 (SZO) thin films with various Mo-doping concentrations were investigated in the study. The 0.2 mol% Mo-doping SZO-based memory device showed excellent resistive switching characteristics, and the resistive switching can be operated over 300 times during