𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Resistive switching properties of sol–gel derived Mo-doped SrZrO3 thin films

✍ Scribed by Chih-Yang Lin; Chun-Chieh Lin; Chun-Hsing Huang; Chen-Hsi Lin; Tseung-Yuen Tseng

Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
737 KB
Volume
202
Category
Article
ISSN
0257-8972

No coin nor oath required. For personal study only.

✦ Synopsis

Hysteretic I-V characteristics of the SrZrO 3 (SZO) thin films with various Mo-doping concentrations were investigated in the study. The 0.2 mol% Mo-doping SZO-based memory device showed excellent resistive switching characteristics, and the resistive switching can be operated over 300 times during successive operation. Both high and low conductive states were stable over 10 4 s. Multi-bit behavior was investigated by dc voltage sweeping with different spans of voltage scan for OFF-process and by various OFF-pulse voltages as well. The endurance test can be over 1000 times with no data loss found. The experimental results showed high potential for nonvolatile memory application.

📜 SIMILAR VOLUMES

Preparation and luminescent properties o
Preparation and luminescent properties of Eu-doped BaTiO3 thin films by sol–gel process
✍ Juan Li; Makoto Kuwabara 📂 Article 📅 2003 🏛 Institute of Physics and National Institute of Mat 🌐 English ⚖ 301 KB

Eu-doped BaTiO 3 thin films with a pseudo-cubic perovskite structure were successfully fabricated on magnesia substrates at low temperature by using a high-concentration sol-gel process, in which the newly developed gel-aging process on substrate was employed. Film microstructure, crystallinity, sin