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Voltage characteristics of planar galvanomagnetic effect in thin ferromagnetic films

✍ Scribed by Sczaniecki, Z. ;Gontarz, R. ;Kwiatkowski, W. ;Ratajczak, H.

Publisher
John Wiley and Sons
Year
1971
Tongue
English
Weight
332 KB
Volume
7
Category
Article
ISSN
0031-8965

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## Abstract The present work investigates the relation between ferromagnetism and intrinsic defects of C‐doped ZnO thin films. The room‐temperature ferromagnetism (RTFM) in C‐doped ZnO is due to the charge transfer between Zn 4s and C 2p orbitals. The long‐range magnetic interaction in C‐doped ZnO