Effect of defects in ferromagnetic C doped ZnO thin films
✍ Scribed by Munisamy Subramanian; Yuhei Akaike; Yasuhiko Hayashi; Masaki Tanemura; Hiroshi Ebisu; Daniel Lau Shu Ping
- Publisher
- John Wiley and Sons
- Year
- 2012
- Tongue
- English
- Weight
- 344 KB
- Volume
- 249
- Category
- Article
- ISSN
- 0370-1972
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✦ Synopsis
Abstract
The present work investigates the relation between ferromagnetism and intrinsic defects of C‐doped ZnO thin films. The room‐temperature ferromagnetism (RTFM) in C‐doped ZnO is due to the charge transfer between Zn 4s and C 2p orbitals. The long‐range magnetic interaction in C‐doped ZnO is due to carbon–carbon interaction mediated by oxygen. The oxygen‐ and zinc‐related defects in C‐doped ZnO affect the mediation of ferromagnetic interaction and the existence of hybridization between Zn and C, respectively.
📜 SIMILAR VOLUMES
A series of Zn 1Àx Co x O thin films with the atomic fraction, x, in the range of 0.03-0.10 were deposited on glass substrates at room temperature by magnetron co-sputtering technique and subsequently coupled with the post-annealing treatment for half hour at different temperatures (350 8C and 500 8