Epitaxially grown Si/SiGe interband tunn
Epitaxially grown Si/SiGe interband tunneling diodes with high room-temperature peak-to-valley ratio
โ
Duschl, R.; Schmidt, O. G.; Eberl, K.
๐
Article
๐
2000
๐
American Institute of Physics
๐
English
โ 288 KB