Electron resonant tunneling with a high peak-to-valley ratio at room temperature in Si[sub 1−x]Ge[sub x]/Si triple barrier diodes

✍ Scribed by Suda, Yoshiyuki; Koyama, Hajime

• Book ID: 119964898
• Publisher: American Institute of Physics
• Year: 2001
• Tongue: English
• Weight: 351 KB
• Volume: 79
• Category: Article
• ISSN: 0003-6951
• DOI: 10.1063/1.1408598