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Very High Carrier Mobility for High-Performance CMOS on a Si(110) Surface

โœ Scribed by Teramoto, A.; Hamada, T.; Yamamoto, M.; Gaubert, P.; Akahori, H.; Nii, K.; Hirayama, M.; Arima, K.; Endo, K.; Sugawa, S.; Ohmi, T.


Book ID
114618749
Publisher
IEEE
Year
2007
Tongue
English
Weight
529 KB
Volume
54
Category
Article
ISSN
0018-9383

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Epitaxial anatase HfO2 on high-mobility
โœ A. Debernardi; C. Wiemer; M. Fanciulli ๐Ÿ“‚ Article ๐Ÿ“… 2008 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 380 KB

On the basis of ab initio simulations, the formation of an epitaxial phase that has the anatase structure has been proposed as the microscopic mechanism responsible for the preferential orientation of monoclinic HfO 2 films on the high-mobility (0 0 1) oriented Ge and GaAs substrates. In fact, the o