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Vertically Aligned Sulfur-Doped ZnO Nanowires Synthesized via Chemical Vapor Deposition

✍ Scribed by Bae, Seung Yong; Seo, Hee Won; Park, Jeunghee


Book ID
119948677
Publisher
American Chemical Society
Year
2004
Tongue
English
Weight
309 KB
Volume
108
Category
Article
ISSN
0022-3654

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**GaN nanowires with diameters in the quantum‐confinement** size regime (4–10 nm, ∼10 nm in Figure) are prepared on large‐area substrates through catalytic reaction of Ga and NH~3~ in a hot‐filament chemical vapor deposition system. The synthetic method is reproducible and could be applied to the gr