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Vertical scaling of carbon nanotube field-effect transistors using top gate electrodes

โœ Scribed by Wind, S. J.; Appenzeller, J.; Martel, R.; Derycke, V.; Avouris, Ph.


Book ID
120032128
Publisher
American Institute of Physics
Year
2002
Tongue
English
Weight
485 KB
Volume
80
Category
Article
ISSN
0003-6951

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For the first time, we present a scaling study of carbon nanotube field-effect transistors (CNTFETs) using a two-dimensional model. We investigate the scaling issues in device performance focusing on transconductance characteristics, output characteristics, average velocity, I on /I off ratio, subth