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Origin of Gate Hysteresis in Carbon Nanotube Field-Effect Transistors

✍ Scribed by Lee, J.S.; Ryu, S.; Yoo, K.; Choi, I.S.; Yun, W.S.; Kim, J.

Book ID: 121087350
Publisher: American Chemical Society
Year: 2007
Tongue: English
Weight: 197 KB
Volume: 111
Category: Article
ISSN: 1932-7447
DOI: 10.1021/jp074692q

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