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Vertical resistive transition in SiNb multilayers

✍ Scribed by S.N. Song; J.B. Ketterson

Publisher: Elsevier Science
Year: 1990
Tongue: English
Weight: 177 KB
Volume: 165-166
Category: Article
ISSN: 0921-4526
DOI: 10.1016/s0921-4526(90)81089-7

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✦ Synopsis

The vertical and in-plane resistive transition in a series of Si/Nb multilayers has been studied. An anisotropic percolation model is adequate to explain the observed transition behavior.

The measured temperature dependence of the supercurrent is compared with the Ambagaokar-Baratoff theory. The tail structure in Ifl) curves near T, is interpreted as the short coherence length effect.

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