Resistive memory effect in self-assembled 3-aminopropyltrimethoxysilane molecular multilayers
✍ Scribed by Chauhan, A. K. ;Aswal, D. K. ;Koiry, S. P. ;Padma, N. ;Saxena, V. ;Gupta, S. K. ;Yakhmi, J. V.
- Publisher
- John Wiley and Sons
- Year
- 2008
- Tongue
- English
- Weight
- 290 KB
- Volume
- 205
- Category
- Article
- ISSN
- 0031-8965
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✦ Synopsis
Abstract
We have observed a pronounced resistive memory effect with an on/off ratio of ∼2 in 3‐aminopropyltrimethoxysilane (APTMS) molecular multilayers trapped with NH^+^~3~ ions. The APTMS multilayers were deposited on SiO~2~/Si(p^++^) substrates using a self‐assembly process and characterized using various techniques, such as water contact angle, elliposmetery, X‐ray photoelectron microscopy, X‐ray diffraction and atomic force microscopy. The current–voltage characteristics of Hg/APTMS multilayer/Si(p^++^) devices, in the negative bias region, exhibited a reproducible hysteresis effect along with a negative differential resistance. A plausible explanation of the observed hysteresis in terms of filling and de‐filling of the positive ion traps is proposed. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)