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Vertical coupling effects and transition energies in multilayer InAs/GaAs quantum dots

✍ Scribed by Yiming Li


Book ID
108278932
Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
442 KB
Volume
566-568
Category
Article
ISSN
0039-6028

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Hole emission from single and vertically coupled quantum dots (SQD and VCQD) in InAs/GaAs p-n heterostructures under varied reverse bias and the influence exerted on this process by the Coulomb interaction between the quantum dots and point defects situated near the dots has been studied by capacita