Two-dimensional modeling of high-speed b
β
M. SchrΓΆter; H.-M. Rein
π
Article
π
1985
π
Elsevier Science
β 288 KB
It is demonstrated both by numerical two-dimensional transistor simulation and by experiment that the Integral Charge-Control Relation (ICCR) is well suited for modeling high-speed bipolar transistors even at very high current densities. For this, the one-dimensional version proposed by Gumme] was m