Two-dimensional modeling of high-speed bipolar transistors at high current densities using the integral charge-control relation
✍ Scribed by M. Schröter; H.-M. Rein
- Publisher
- Elsevier Science
- Year
- 1985
- Weight
- 288 KB
- Volume
- 129
- Category
- Article
- ISSN
- 0378-4363
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✦ Synopsis
It is demonstrated both by numerical two-dimensional transistor simulation and by experiment that the Integral Charge-Control Relation (ICCR) is well suited for modeling high-speed bipolar transistors even at very high current densities. For this, the one-dimensional version proposed by Gumme] was modified taking into account two-dimensional transistor effects.
i. INTRODUCTION
Careful modeling of transistors is an imperative condition for reliably predicting the switching behavior of high-speed integrated circuits by network simulation, Our experience over many years is that relatively simple model struc~ tures are sufficient for this task even for very 1 fast transients (e.g. 200 ps) as long as the transistors are operated outside the high-cur-+ rent region.