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Variation of Zr-L 2,3 XANES in tetravalent zirconium oxides

✍ Scribed by Ikeno, Hidekazu; Krause, Michael; Höche, Thomas; Patzig, Christian; Hu, Yongfeng; Gawronski, Antje; Tanaka, Isao; Rüssel, Christian


Book ID
120197205
Publisher
Institute of Physics
Year
2013
Tongue
English
Weight
491 KB
Volume
25
Category
Article
ISSN
0953-8984

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Zirconium oxide thin films were grown by atomic layer deposition (ALD) at low temperatures, ranging from 150 C to 300 C, by alternate surface reactions between Zr[OC(CH 3 ) 3 ] 4 and H 2 O. The films grown in the temperature range 200± 300 C were nanocrystalline. No films could be deposited above 30