✦ LIBER ✦
Low-Temperature Deposition of Zirconium Oxide–Based Nanocrystalline Films by Alternate Supply of Zr[OC(CH3)3]4 and H2O
✍ Scribed by K. Kukli; M. Ritala; M. Leskelä
- Publisher
- John Wiley and Sons
- Year
- 2000
- Tongue
- English
- Weight
- 429 KB
- Volume
- 6
- Category
- Article
- ISSN
- 0948-1907
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✦ Synopsis
Zirconium oxide thin films were grown by atomic layer deposition (ALD) at low temperatures, ranging from 150 C to 300 C, by alternate surface reactions between Zr[OC(CH 3 ) 3 ] 4 and H 2 O. The films grown in the temperature range 200± 300 C were nanocrystalline. No films could be deposited above 300 C. The refractive index of the films reached 1.95, measured at a wavelength of 580 nm. The permittivity of the nanocrystalline films was approximately 32. The permittivity and resistivity of the films were increased by depositing ZrO 2 ±Ta 2 O 5 nanolaminates and annealing in ambient air.