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Variation of strain/defects in H+-implanted single crystal silicon

✍ Scribed by Xinzhong Duo; Weili Liu; Miao Zhang; Xiaorong Fu; Jipo Huang; Chenglu Lin

Book ID: 114164126
Publisher: Elsevier Science
Year: 2000
Tongue: English
Weight: 213 KB
Volume: 170
Category: Article
ISSN: 0168-583X
DOI: 10.1016/s0168-583x(00)00170-1

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## Abstract Si(001) single crystal was implanted with hydrogen ions with energy 135 keV and dose 5 × 10^16^ cm^–2^. After implantation, Si:H samples were annealed at 450 and 650 °C under atmospheric and enhanced hydrostatic pressure (1.1 GPa). Defect structure of as‐implanted and processed Si:H was

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