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Variation of N acceptor energy induced by Al–N codoping in ZnO films

✍ Scribed by Su Jianfeng; Tang Chunjuan; Niu Qiang; Wang Changqing; Fu Zhuxi


Book ID
116606596
Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
561 KB
Volume
500
Category
Article
ISSN
0925-8388

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Al and N codoped ZnO thin films were grown on n-Si (100) substrate by sputtering technique. Hall effect measurements of as-grown films exhibited n-type conduction, however 500 °C Ar annealed codoped films showed p-type conductivity with a hole concentration of 9.9 × 10 16 cm -3 , resistivity of 15.9