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Vapor pressures of the adducts formed during AlGaN organometallic vapor-phase epitaxy

✍ Scribed by J. Randall Creighton

Book ID
107452791
Publisher
Springer US
Year
2002
Tongue
English
Weight
119 KB
Volume
31
Category
Article
ISSN
0361-5235

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Atmospheric pressure growth of Eu-doped
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## Abstract We investigated the luminescence properties of the Eu‐doped GaN (GaN:Eu) grown at atmospheric (100 kPa) and low (10 kPa) pressures by organometallic vapor phase epitaxy (OMVPE). Although Eu concentration of atmospheric pressure GaN:Eu (AP‐GaN:Eu) is lower than that of low pressure GaN:E