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Vapor Growth of Al2O3 Bicrystals

✍ Scribed by H. S. PARKER; C. A. HARDING


Book ID
110813222
Publisher
John Wiley and Sons
Year
1970
Tongue
English
Weight
575 KB
Volume
53
Category
Article
ISSN
0002-7820

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Growth of Ξ²-Ga2O3on Al2O3and GaAs using
✍ Gottschalch, Volker ;Mergenthaler, Kilian ;Wagner, Gerald ;Bauer, Jens ;Paetzelt πŸ“‚ Article πŸ“… 2009 πŸ› John Wiley and Sons 🌐 English βš– 950 KB

## Abstract Epitaxial layers of monoclinic β‐Ga~2~O~3~ were successfully grown on (0001) sapphire and ($ \bar 1 $11)~As~ GaAs substrates using metal‐organic vapor‐phase epitaxy (MOVPE). Triethylgallium (TEGa) and N~2~O were used as precursors for gallium and oxygen, respectively. Growth conditions