Vapor Density of Nitrogen Tetroxide over Carbon Tetrachloride Solutions by a Colorimetric Method

Control of Carrier Density by a Solution

Control of Carrier Density by a Solution Method in Carbon-Nanotube Devices

✍ T. Takenobu; T. Kanbara; N. Akima; T. Takahashi; M. Shiraishi; K. Tsukagoshi; H. 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 858 KB

∼ 0.1 lm 3 nC -1 , compared to ∼ 0.15 lm 3 nC -1 in silicon. Greatly increased FIB etch rates could be achieved with water-vapor assistance. Thermal Annealing: The intermediate and final annealings were performed in a furnace, in a controlled atmosphere. The intermediate annealing was at 550 °C for