Control of Carrier Density by a Solution Method in Carbon-Nanotube Devices

✍ Scribed by T. Takenobu; T. Kanbara; N. Akima; T. Takahashi; M. Shiraishi; K. Tsukagoshi; H. Kataura; Y. Aoyagi; Y. Iwasa

• Book ID: 102688118
• Publisher: John Wiley and Sons
• Year: 2005
• Tongue: English
• Weight: 858 KB
• Volume: 17
• Category: Article
• ISSN: 0935-9648
• DOI: 10.1002/adma.200500759

✦ Synopsis

∼ 0.1 lm 3 nC -1 , compared to ∼ 0.15 lm 3 nC -1 in silicon. Greatly increased FIB etch rates could be achieved with water-vapor assistance.

Thermal Annealing: The intermediate and final annealings were performed in a furnace, in a controlled atmosphere. The intermediate annealing was at 550 °C for 1 h in air, while the final annealing was at 1100 °C for 2.5 h in forming gas (4 % H 2 in Ar), where the hydrogen in the annealing gas prevented high-temperature oxidation.

Etching: The samples were etched in boiling acid (1:1:1 H 2 SO 4 / HClO 4 /HNO 3 ) and then rinsed in hot water and isopropyl alcohol to avoid thermal shocks to the microstructures. When the sacrificial layer was completely underetched, the sample was rinsed for few minutes in an ultrasonic bath in order to allow the lift-off of the sacrificial layer without damaging the microstructures.