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Vacuum evaporated silicon layers free from stacking faults: G.R. Booker and B.A. Unvala, Phil. Mag., 8, Sept. 1963, 1597–1598

Publisher: Elsevier Science
Year: 1964
Tongue: English
Weight: 73 KB
Volume: 14
Category: Article
ISSN: 0042-207X
DOI: 10.1016/0042-207x(64)91144-3

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828. Growth of epitaxial silicon layers

828. Growth of epitaxial silicon layers by vacuum evaporation. I. Experimental procedure and initial assessment: B.A. Unvala and G.R. Booker, Phil. Mag., 9 (100), April 1964, 691–701

📂 Article 📅 1964 🏛 Elsevier Science 🌐 English ⚖ 104 KB