Schottky devices were fabricated by thermal evaporation of indium on chemically synthesized polyaniline, poly(o-anisidine), and poly(aniline-co-ortho-anisidine) copolymer. Electrical characterization of each of these devices was carried out using current (I) -voltage (V ) and capacitance (C) -voltag
โฆ LIBER โฆ
Vacuum-deposited metal/polyaniline Schottky device
โ Scribed by Misra, S. C. K.; Ram, M. K.; Pandey, S. S.; Malhotra, B. D.; Chandra, Subhas
- Book ID
- 120533393
- Publisher
- American Institute of Physics
- Year
- 1992
- Tongue
- English
- Weight
- 612 KB
- Volume
- 61
- Category
- Article
- ISSN
- 0003-6951
- DOI
- 10.1063/1.107600
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