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Vacancies and interstitials in lead

โœ Scribed by A Seeger


Publisher
Elsevier Science
Year
1971
Tongue
English
Weight
194 KB
Volume
35
Category
Article
ISSN
0375-9601

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Point defect transport in a growing crystal includes a drift along the temperature gradient, G, at a velocity ห›G. It was not clear if the drift is negligible or strong in silicon crystal growth. It is now found that reported microdefect patterns in crystals grown with a temporarily halt provide a cl