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UV absorption of ion implanted sapphire

✍ Scribed by M.L. Dalal; M. Rahmani; P.D. Townsend


Book ID
113278979
Publisher
Elsevier Science
Year
1988
Tongue
English
Weight
433 KB
Volume
32
Category
Article
ISSN
0168-583X

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Optical properties of ion-implanted sili
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The Jormation of amorphous zones in thin heteroepitaxial layers" of silicon has been investigated by optical transmission spectroscopy' with ion species, dose, intensity and irradiation temperature as the main parameters. The dependence of the recrystallization of the irradiated layers on annealing