Using AG theory to model a S/I/N tunnel junction

✍ Scribed by R.V.A. Srivastava; W. Teizer; F. Hellman; R.C. Dynes

• Publisher: Elsevier Science
• Year: 2008
• Tongue: English
• Weight: 247 KB
• Volume: 403
• Category: Article
• ISSN: 0921-4526
• DOI: 10.1016/j.physb.2007.10.315

✦ Synopsis

We have measured the spin polarized tunneling conductance of a thin Al/Al 2 O 3 /amorphous Gd x Si 1Àx planar tunnel junction at T ¼ 25 mK in parallel magnetic field Hp3.0 T. Abrikosov-Gorkov theory is a better model for the thin superconducting Al electrode than previously used Bardeen-Cooper-Schrieffer theory. As the magnetic field is increased, we find the best fit to the data by modelling a transition from a superconductor with gap (ao1) to a gapless superconductor (a41).