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Use of the three-dimensional TLM method in the thermal simulation and design of semiconductor devices

โœ Scribed by Gui, X.; Webb, P.W.; Gao, G.B.

Book ID
114534623
Publisher
IEEE
Year
1992
Tongue
English
Weight
734 KB
Volume
39
Category
Article
ISSN
0018-9383

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๐Ÿ“œ SIMILAR VOLUMES

Use of the two-dimensional TLM method in
Use of the two-dimensional TLM method in the electromagnetic simulation of thin semiconductor samples
โœ Salam F. Dindo; Michel M. Ney; Robert G. Harrison ๐Ÿ“‚ Article ๐Ÿ“… 1995 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 955 KB

A two-dimensional lossy shunt TLM node is incorporated into a TLM system and adapted to model for the first time the Maxwell field equations in thin semiconductor samples. Both the characteristics of the node and the TLM system itself are fully described. By considering a parallel-plate structure co