𝔖 Bobbio Scriptorium
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Use of the method of broken total internal reflection to determine semiconductor properties

✍ Scribed by D. I. Bilenko; B. A. Dvorkin; Z. V. Shekhter


Book ID
112435335
Publisher
Springer
Year
1972
Tongue
English
Weight
331 KB
Volume
15
Category
Article
ISSN
1573-9228

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Measurement of apex angle of the prism u
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Total internal re ection technique is examined critically for the measurement of apex angle of the prism. Recognition of the critical boundary completely speciΓΏes the apex angle 'A' of the prism by keeping constant the ratio of refractive index of sample uid (n1 = 1:4) to that of glass (n2 = 1:7). R