Design study of high energy, high curren
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R.W. Thomae; H. Deitinghoff; J. HΓ€user; H. Klein; P. Leipe; A. Schempp; T. Weis;
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Article
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1989
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Elsevier Science
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English
β 392 KB
Ion implantation is of great importance in semiconductor device fabrication. Owing to the increasing interest of" the microelectronic industry in the implantation of ions in the megaelectronvolt energy range, high energy beams are required. Furthermore, for several applications the implanted dose is