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Use of epitaxial gallium arsenide in detectors

✍ Scribed by V. M. Zaletin; Yu. V. Tuzov; V. F. Dvoryankin; A. A. Sokolovskii


Book ID
106355386
Publisher
Springer US
Year
2007
Tongue
English
Weight
144 KB
Volume
103
Category
Article
ISSN
1573-8205

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The epitaxial growth of gallium arsenide
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The thermal decomposition of triethylarsine (TEAS) has been studied. It decomposes at a lower temperature than arsine (AsH3). The decomposition proceeds via a radical process at a temperature above 700Β°C. Epitaxial growth using TEAs has been investigated. A gallium arsenide (GaAs) layer with good mo