Metal–insulator transition in disordered
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R.E. Baumbach; W.M. Yuhasz; M.B. Maple
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Article
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2008
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Elsevier Science
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English
⚖ 237 KB
Results are reported for YbFe 4 Sb 12 thin films grown by pulsed laser deposition (PLD) with thicknesses (t) 60004t4300 A ˚. Thick films (t41000 A ˚) show electrical transport behavior typical of bulk specimens. Surprisingly, a metal to insulator transition (MIT) is observed for films with to1000 A