𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Metal–insulator transition in disordered YbFe4Sb12 thin films

✍ Scribed by R.E. Baumbach; W.M. Yuhasz; M.B. Maple

Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
237 KB
Volume
403
Category
Article
ISSN
0921-4526

No coin nor oath required. For personal study only.

✦ Synopsis

Results are reported for YbFe 4 Sb 12 thin films grown by pulsed laser deposition (PLD) with thicknesses (t) 60004t4300 A ˚. Thick films (t41000 A ˚) show electrical transport behavior typical of bulk specimens. Surprisingly, a metal to insulator transition (MIT) is observed for films with to1000 A ˚. It is argued that the MIT is due to structural disorder.

📜 SIMILAR VOLUMES

Metal-insulator transition in thin TiOx
Metal-insulator transition in thin TiOx films
✍ C. Vlekken; J. Vangrunderbeek; C. Van Haesendonck; Y. Bruynseraede 📂 Article 📅 1991 🏛 Elsevier Science 🌐 English ⚖ 221 KB

Conductivity and electron tunneling measurements are reported for amorphous, oxygen rich Ti films in the vicinity of the Anderson metal-insulator transition. In the metallic films the conductivity varies proportional to ~/-T, while for the insulating films the Mott variable range hopping process is