✦ LIBER ✦

Universal MOSFET hole mobility degradation models for circuit simulation

✍ Scribed by Agostinelli, V.M., Jr.; Yeric, G.M.; Tasch, A.F., Jr.

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Improved universal MOSFET electron mobil

✍ Yue, C.; Agostinelli, V.M., Jr.; Yeric, G.M.; Tasch, A.F. 📂 Article 📅 1993 🏛 IEEE 🌐 English ⚖ 363 KB

A universal MOSFET mobility degradation

✍ Yeric, G.M.; Tasch, A.F.; Banerjee, S.K. 📂 Article 📅 1990 🏛 IEEE 🌐 English ⚖ 381 KB

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✍ Kyeong-Sik Min; Kwyro Lee 📂 Article 📅 1995 🏛 IEEE 🌐 English ⚖ 504 KB

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✍ Joardar, K.; Gullapalli, K.K.; McAndrew, C.C.; Burnham, M.E.; Wild, A. 📂 Article 📅 1998 🏛 IEEE 🌐 English ⚖ 573 KB

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✍ Arora, N.D.; Sharma, M.S. 📂 Article 📅 1991 🏛 IEEE 🌐 English ⚖ 732 KB

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✍ Fossum, J.G.; Veeraraghaven, S.; Fitzpatrick, D. 📂 Article 📅 1988 🏛 IEEE 🌐 English ⚖ 392 KB