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Universal bandgap bowing in group-III nitride alloys

✍ Scribed by J Wu; W Walukiewicz; K.M Yu; J.W Ager III; S.X Li; E.E Haller; Hai Lu; William J Schaff

Book ID: 104166245
Publisher: Elsevier Science
Year: 2003
Tongue: English
Weight: 125 KB
Volume: 127
Category: Article
ISSN: 0038-1098
DOI: 10.1016/s0038-1098(03)00457-5

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✦ Synopsis

The energy gaps of molecular-beam-epitaxy grown wurtzite-structure In 12x Al x N alloys with x # 0:25 have been measured by absorption and photoluminescence experiments. The results are consistent with the recent discovery of a narrow bandgap of , 0.7 eV for InN. A bowing parameter of 3 eV was determined from the composition dependence of these bandgaps. Combined with previously reported data of InGaN and GaAlN, these results show a universal relationship between the bandgap variations of group-III nitride alloys and their compositions.

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## Abstract Using __ab initio__ calculations a comparison between In~__x__~Ga~1−__x__~N, In~__x__~Al~1−__x__~N and Ga~__x__~Al~1−__x__~N is performed to examine the role of indium in nitride alloys. The band gap, __E__~g~, as well as its pressure coefficient, d__E__~g~/d__p__, are studied as functi