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Unipolar SiC power devices and elevated temperature

โœ Scribed by Peter Friedrichs; Dietrich Stephani


Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
124 KB
Volume
83
Category
Article
ISSN
0167-9317

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Widegap semiconductors generally have better material constants than Si, and it is expected that semiconductor power devices with innovative performance beyond the material limits of Si will be realized. This paper focuses on SiC devices, in which remarkable progress has recently been made. The char