Performance and application impact of widegap power semiconductor devices focusing on SiC
✍ Scribed by Yoshitaka Sugawara
- Publisher
- John Wiley and Sons
- Year
- 1999
- Tongue
- English
- Weight
- 259 KB
- Volume
- 82
- Category
- Article
- ISSN
- 8756-663X
No coin nor oath required. For personal study only.
✦ Synopsis
Widegap semiconductors generally have better material constants than Si, and it is expected that semiconductor power devices with innovative performance beyond the material limits of Si will be realized. This paper focuses on SiC devices, in which remarkable progress has recently been made. The characteristics of the material and the expected performance of SiC devices are discussed in comparison with Si. The expected results of applying SiC power semiconductor devices to power conversion are discussed in detail from the viewpoints of power loss and reduction of equipment volume, based on the calculated examples. The state of development of SiC power semiconductor devices is reviewed, and technical problems of device development are discussed.