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Uniaxial Stress Induced Electron Mobility Enhancement in Silicon

✍ Scribed by J. L. Ma, Z. F. Fu, Q. Wei, H. M. Zhang

Book ID
120670690
Publisher
Springer Netherlands
Year
2013
Tongue
English
Weight
351 KB
Volume
5
Category
Article
ISSN
1876-990X

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πŸ“œ SIMILAR VOLUMES

Silicon nanowires with lateral uniaxial
Silicon nanowires with lateral uniaxial tensile stress profiles for high electron mobility gate-all-around MOSFETs
✍ M. Najmzadeh; L. De Michielis; D. Bouvet; P. Dobrosz; S. Olsen; A.M. Ionescu πŸ“‚ Article πŸ“… 2010 πŸ› Elsevier Science 🌐 English βš– 486 KB

In this work we present for the first time correlation of lateral uniaxial tensile strain and I-V characteristics of GAA Si NW n-MOSFET, all measured on the same device. Micro-Raman spectroscopy is employed for direct strain measurement on devices to exploit the main sources of process-induced strai