## Abstract Photoluminescence from free excitons in GaAs has been studied by Gilleo et al. [4] for [100] stresses up to 500 kp cm^β2^. An analysis of their results is presented taking into account the spinβexchange splitting of the exciton states and the variation with stress of the enveloppes func
β¦ LIBER β¦
Uniaxial-strain effects on n = 1 free-exciton and free-carrier lines in GaAs
β Scribed by M.A. Gilleo; P.T. Bailey; D.E. Hill
- Publisher
- Elsevier Science
- Year
- 1970
- Tongue
- English
- Weight
- 515 KB
- Volume
- 1-2
- Category
- Article
- ISSN
- 0022-2313
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