๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Unexpected negative nonmonotonic magnetoresistance of the two-dimensional electrons in Si in a parallel magnetic field

โœ Scribed by V. M. Pudalov; A. S. Kirichenko; N. N. Klimov; M. E. Gershenson; H. Kojima


Book ID
110140416
Publisher
SP MAIK Nauka/Interperiodica
Year
2004
Tongue
English
Weight
61 KB
Volume
80
Category
Article
ISSN
0021-3640

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Magnetoresistance of a Si-MOSFET structu
โœ J.M. Broto; M. Goiran; H. Rakoto; A. Gold; V.T. Dolgopolov ๐Ÿ“‚ Article ๐Ÿ“… 2004 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 246 KB

We measured the magnetoresistance of a two-dimensional electron gas in a strongly disordered silicon MOSFET system in the presence of a parallel magnetic field up to 40 T. We observe resistance saturation for magnetic fields larger than the calculated magnetic field for fully spin-polarized electron

Magnetoresistance of two-dimensional ele
โœ Suguru Wada; Noriki Okuda; Junichi Wakabayashi ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 359 KB

We report on the experiments of magnetotransport measurements of two-dimensional electron systems in random magnetic fields having several amplitudes with zero mean. The random magnetic field is produced by placing small ferromagnetic disks quasi-randomly onto the surface of the gate electrode of Ga