The electronic structure of a d-doped quantum well of B in Si is studied at room temperature in the case of high impurity concentration. The calculation is carried out self-consistently in the framework of the Hartree approximation. A model with three independent hole bands is considered. The energy
β¦ LIBER β¦
Unexpected features in the magnetoresistance of a quantum well at room temperature
β Scribed by Z. Xiong; D.J. Miller
- Publisher
- Elsevier Science
- Year
- 1996
- Tongue
- English
- Weight
- 282 KB
- Volume
- 19
- Category
- Article
- ISSN
- 0749-6036
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## Abstract This paper describes the rheological behavior of the liquid metal eutectic galliumβindium (EGaIn) as it is injected into microfluidic channels to form stable microstructures of liquid metal. EGaIn is wellβ ;suited for this application because of its rheological properties at room temper