Undoped GaAs grown by the vertical gradient freeze method: growth and properties

✍ Scribed by E. Buhrig; C. Frank; G. Gärtner; K. Hein; V. Klemm; G. Kühnel; U. Voland

• Publisher: Elsevier Science
• Year: 1994
• Tongue: English
• Weight: 432 KB
• Volume: 28
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/0921-5107(94)90022-1

✦ Synopsis

Undoped GaAs crystals were grown by the vertical gradient freeze technique in a multizone furnace. By optimization of the growth equipment and the thermodynamic conditions, crystals were obtained with a low density of microdefects and dislocations (etch pits density about 10 3 cm-2) as well as semi-insulating behaviour. Residual impurities and defect levels were investigated by optical (local vibrational-mode and IR absorption) and Hall effect measurements.