Undoped GaAs grown by the vertical gradi
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E. Buhrig; C. Frank; G. GΓ€rtner; K. Hein; V. Klemm; G. KΓΌhnel; U. Voland
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Article
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1994
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Elsevier Science
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English
β 432 KB
Undoped GaAs crystals were grown by the vertical gradient freeze technique in a multizone furnace. By optimization of the growth equipment and the thermodynamic conditions, crystals were obtained with a low density of microdefects and dislocations (etch pits density about 10 3 cm-2) as well as semi-