The He I photoektron spectra of gas-phase oxygen dimer and oxygen clusters have been measured in a pulsed beam, The spectrum of the dimer (Oz), is characterized by broad bands which show 1 : 1 correspondence with those of the monomer 0,. The vertical ionization energies are 0.2 f 0.1 eV lower than t
Ultraviolet photoelectron spectroscopy of semiconductor clusters: Silicon and germanium
β Scribed by O. Cheshnovsky; S.H. Yang; C.L. Pettiette; M.J. Craycraft; Y. Liu; R.E. Smalley
- Publisher
- Elsevier Science
- Year
- 1987
- Tongue
- English
- Weight
- 685 KB
- Volume
- 138
- Category
- Article
- ISSN
- 0009-2614
No coin nor oath required. For personal study only.
β¦ Synopsis
Ultraviolet photoelectron spectra (UPS) are reported here for semiconductor clusters prepared in a supersonic beam. Using a new magnetically focused time-of-flight photoelectron spectrometer, UPS spectra were obtained for mass-selected negative cluster ions of silicon and germanium in the 3-12-atom size range. An ArF excimer laser (6.4 eV) was used for ph~~etachmen~ enabling the first 3-4 eV of the valence band structure of the clusters to be probed. With few exceptions, the UPS data for corresponding clusters of the two semiconductors were remarkably similar. The spectra suggest that clusters 4,6, 7, and 10 of silicon and 4,6 and 7 of germanium are closed-shell species with band saps of 1 to 1.
π SIMILAR VOLUMES
Chemical shifts in coru binding energies have been determined for analogous gaseous compounds of carbon, silicon and germanium. These data, in conjunction with the atomic charge potential model and both CNDO/Z and electronegativity parameter charges, indicate that the silicon and germanium atoms in
Photoelectron spectra of hexafluorobenzene (C6Fa) cluster anions and its Au complex anion were measured in the gas phase at the photon energy of 3.49 eV, using a magnetic bottle electron spectrometer having a SO meV resolution. The spectra show unresolved broad features: The vertical detachment ener
The valence band relaxation energies of the intrinsic wmiconductors silicon and germanium are estimated using a classical and a quantum-lnechanic;ll method and are found to be snndar in magnitude to values reported for ronductors and msulators. It is shown that the XI'S electronic valcncc band struc