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Ultraviolet (340–390 nm), room temperature, photoluminescence from InAs nanocrystals embedded in SiO2 matrix

✍ Scribed by Shi, Jianzhong; Zhu, Kaigui; Zheng, Qingqi; Zhang, Lide; Ye, Ling; Wu, Jianxin; Zuo, Jian


Book ID
118746697
Publisher
American Institute of Physics
Year
1997
Tongue
English
Weight
396 KB
Volume
70
Category
Article
ISSN
0003-6951

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Silicon nanocrystals (nc-Si) embedded in SiO 2 glassy mixture have been prepared on glass substrates and silicon and germanium wafers by r.f. co-sputtering and post-annealing in a vacuum. Using Raman spectrometry, photoluminescence and electrical conductivity measurements, we have investigated the s