Ultralow nonalloyed Ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In(Ga)N regrowth

✍ Scribed by Dasgupta, Sansaptak; Nidhi, ; Brown, David F.; Wu, Feng; Keller, Stacia; Speck, James S.; Mishra, Umesh K.

• Book ID: 120522646
• Publisher: American Institute of Physics
• Year: 2010
• Tongue: English
• Weight: 601 KB
• Volume: 96
• Category: Article
• ISSN: 0003-6951
• DOI: 10.1063/1.3374331