Ultrahigh-quality single crystals of silicon carbide by alternate repetition of growth perpendicular to c-axis

✍ Scribed by Daisuke Nakamura

• Book ID: 104050439
• Publisher: Elsevier Science
• Year: 2006
• Tongue: English
• Weight: 202 KB
• Volume: 83
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/j.mee.2005.10.039

✦ Synopsis

The dislocation structure of grown crystals perpendicular to c-axis was investigated by means of X-ray analysis. It was revealed that the dislocations were almost straight parallel to the growth direction in the crystals. The alternate repetition of growth in the direction to ½1 1 0 0 and ½1 1 2 0 made the dislocations and lattice distortion successfully reduced. The mechanism for the reduction was attributed to less exposure of the dislocations to a seed surface, because the straight dislocations in the seed crystal exist parallel to the seed surface. A crystal grown on {0 0 0 1} seed substrate sliced out from the crystal by the alternate repetition of growth had drastically lower defect density than conventional crystals.