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Ultrahigh-quality silicon carbide single crystals

โœ Scribed by Nakamura, Daisuke; Gunjishima, Itaru; Yamaguchi, Satoshi; Ito, Tadashi; Okamoto, Atsuto; Kondo, Hiroyuki; Onda, Shoichi; Takatori, Kazumasa


Book ID
109893160
Publisher
Nature Publishing Group
Year
2004
Tongue
English
Weight
212 KB
Volume
430
Category
Article
ISSN
0028-0836

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The dislocation structure of grown crystals perpendicular to c-axis was investigated by means of X-ray analysis. It was revealed that the dislocations were almost straight parallel to the growth direction in the crystals. The alternate repetition of growth in the direction to ยฝ1 1 0 0 and ยฝ1 1 2 0 m